PART |
Description |
Maker |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
3N206 3N204 3N205 |
Silicon dual insulated-gate field-effect transistor. Silicon Dual Insulated-Gate Field-Effect Transistors
|
General Electric Solid State GESS[GE Solid State]
|
IRGP4650D-E IRGP4650DPBF IRGP4650D-EPBF TO-247AC T |
INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLARTRANSIST WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODE
|
List of Unclassifed Manufacturers International Rectifier List of Unclassifed Man...
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2PG303 |
Insulated Gate Bipolar Transistor
|
Panasonic
|
IRG4PC50KPBF |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|